elektronische bauelemente SSD50N08-14D 55a, 80v, r ds(on) 11m n-ch enhancement mode power mosfet 21-jan-2014 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d - pack) a c d n o p g e f h k j m b rohs compliant product a suffix of -c specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe to-252 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 80 v gate-source voltage v gs 20 v continuous drain current 1 t a =25 i d 55 a pulsed drain current 2 i dm 200 a continuous source current (diode conduction) 1 i s 55 a power dissipation 1 t a =25 p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 40 c / w maximum thermal resistance junction-case r jc 3.0 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. millimeter millimeter ref. min. max. ref. min. max. a 6. 4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 1 gate 3 source 2 drain
elektronische bauelemente SSD50N08-14D 55a, 80v, r ds(on) 11m n-ch enhancement mode power mosfet 21-jan-2014 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-source threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =64v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =64v, v gs =0,t j =55c on-state drain current 1 i d(on) 27.5 - - a v ds =5v, v gs =10v - - 11 v gs =10v, i d =27.5a drain-source on-resistance 1 r ds(on) - - 13 m v gs =4.5v, i d =25.3a forward transconductance 1 g fs - 35 - s v ds =15v, i d =27.5a diode forward voltage v sd - 0.82 - v i s =27a, v gs =0 dynamic 2 input capacitance c iss - 5052 - output capacitance c rss - 471 - reverse transfer capacitance c oss - 446 - pf v ds =15 v v gs =0 f=1mhz total gate charge q g - 58 - gate-source charge q gs - 14 - gate-drain change q gd - 39 - nc i d =20a v ds =40v v gs =4.5v turn-on delay time t d(on) - 19 - rise time t r - 45 - turn-off delay time t d(off) - 178 - fall time t f - 62 - ns v ds =40v i d =20a r l = 2 v gen =10v r gen =6 notes: 1. pulse test pw Q 300 us duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SSD50N08-14D 55a, 80v, r ds(on) 11m n-ch enhancement mode power mosfet 21-jan-2014 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical electrical characteristics
elektronische bauelemente SSD50N08-14D 55a, 80v, r ds(on) 11m n-ch enhancement mode power mosfet 21-jan-2014 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical electrical characteristics
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